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General | |||||||||||||||||||||||||||||||
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Name, Symbol, Number | Silicon, Si, 14 | ||||||||||||||||||||||||||||||
Series | metalloid | ||||||||||||||||||||||||||||||
Group, Period, Block | 14 (IVA), 3, p | ||||||||||||||||||||||||||||||
Density, Hardness | 2330 kg/m3, 6.5 | ||||||||||||||||||||||||||||||
Appearance | dark grey, bluish tinge | ||||||||||||||||||||||||||||||
Atomic Properties | |||||||||||||||||||||||||||||||
Atomic weight | 28.0855 amu | ||||||||||||||||||||||||||||||
Atomic radius (calc.) | 110 (111)pm | ||||||||||||||||||||||||||||||
Covalent radius | 111 pm | ||||||||||||||||||||||||||||||
van der Waals radius | 210 pm | ||||||||||||||||||||||||||||||
Electron configuration | [Ne]33s2 3p2 | ||||||||||||||||||||||||||||||
e- 's per energy level | 2, 8, 4 | ||||||||||||||||||||||||||||||
Oxidation states (Oxide) | 4 (amphoteric) | ||||||||||||||||||||||||||||||
Crystal structure | Cubic face centered | ||||||||||||||||||||||||||||||
Physical Properties | |||||||||||||||||||||||||||||||
State of matter | solid (nonmagnetic) | ||||||||||||||||||||||||||||||
Melting point | 1687 K (2577 °F) | ||||||||||||||||||||||||||||||
Boiling point | 3173 K (5252 °F) | ||||||||||||||||||||||||||||||
Molar volume | 12.06 ×1010-3 m3/mol | ||||||||||||||||||||||||||||||
Heat of vaporization | 384.22 kJ/mol | ||||||||||||||||||||||||||||||
Heat of fusion | 50.55 kJ/mol | ||||||||||||||||||||||||||||||
Vapor pressure | 4.77 Pa at 1683 K | ||||||||||||||||||||||||||||||
Speed of sound | __ m/s at __ K | ||||||||||||||||||||||||||||||
Miscellaneous | |||||||||||||||||||||||||||||||
Electronegativity | 1.90 (Pauling scale) | ||||||||||||||||||||||||||||||
Specific heat capacity | 700 J/(kg*K) | ||||||||||||||||||||||||||||||
Electrical conductivity | 2.52 10-4/m ohm | ||||||||||||||||||||||||||||||
Thermal conductivity | 148 W/(m*K) | ||||||||||||||||||||||||||||||
1st ionization potential | 786.5 kJ/mol | ||||||||||||||||||||||||||||||
2nd ionization potential | 1577.1 kJ/mol | ||||||||||||||||||||||||||||||
3rd ionization potential | 3231.6 kJ/mol | ||||||||||||||||||||||||||||||
4th ionization potential | 4355.5 kJ/mol | ||||||||||||||||||||||||||||||
5th ionization potential | 16091 kJ/mol | ||||||||||||||||||||||||||||||
6th ionization potential | 19805 kJ/mol | ||||||||||||||||||||||||||||||
7th ionization potential | 23780 kJ/mol | ||||||||||||||||||||||||||||||
8th ionization potential | 29287 kJ/mol | ||||||||||||||||||||||||||||||
9th ionization potential | 33878 kJ/mol | ||||||||||||||||||||||||||||||
10th ionization potential | 38726 kJ/mol | ||||||||||||||||||||||||||||||
Most Stable Isotopes | |||||||||||||||||||||||||||||||
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SI units & STP are used except where noted. |
Table of contents |
2 Applications 3 History 4 Occurrence 5 Production 6 Purification 7 Crystallization 8 Isotopes 9 Precautions 10 Miscellaneous Information 11 External Links |
Notable Characteristics
In its crystalline form, silicon has a metallic luster and a grayish color. Even though it is a relatively inert element, silicon still reacts with halogens and dilute alkalis, but most acids, (except for hydrofluoric acid) do not affect it. Elemental silicon transmits more than 95% of all wavelengths of infrared light.
Applications
Silicon is a very useful element that is vital to many human industries. Silicon dioxide in the form of sand and clay is an important ingredient of concrete and brick and is also used to produce Portland cement. Silicon is a very important element for plant and animal life. Diatoms extract silica from water to build their protective cell walls. Other uses:
Occurrence
Silicon is a principal component of aerolites which are a class of meteoroids and also of tektites which is a natural form of glass.
Measured by weight, silicon makes up 25.7% of the earth's crust and after oxygen is also the second most abundant element. Elemental silicon is not found in nature. It occurrs most often as oxides and as silicates. Sand, amethyst, agate, quartz, rock crystal, flint, jasper, and opal are some of the forms in which the oxide appears. Granite, asbestos, feldspar, clay, hornblende, and mica are a few of the many silicate minerals.
Production
Silicon is commercially prepared by the heating of high-purity silica in an electric arc furnace using carbon electrodes. At temperatures over 1900°C, the carbon reduces the silica to silicon according to the chemical equation
Purification
The use of silicon in semiconductor devices demands a much greater purity than afforded by metallurgical grade silicon. Historically, a number of methods have been used to produce high-purity silicon.
Physical methods
Early silicon purification techniques were based on the fact that if silicon is melted and re-solidified, the last parts of the mass to solidify contain most of the impurities. The earliest method of silicon purification, first described in 1919 and used on a limited basis to make radar components during World War II, involved crushing metallurgical grade silicon and then partially dissolving the silcon powder in an acid. When crushed, the silicon cracked so that the weaker impurity-rich regions were on the outside of the resulting grains of silicon. As a result, the impurity-rich silicon was the first to be dissolved when treated with acid, leaving behind a more pure product.
In zone melting, the first silicon purification method to be widely used industrially, rods of metallurgical grade silicon were heated to melt at one end. Then, the heater was slowly moved down the length of the rod, keeping a small length of the rod molten as the silicon cooled and resolidified behind it. Since most impurities tend to remain in the molten region rather than resolidify, when the process was complete, most of the impurities in the rod had been moved into end that was the last to be melted. This end was then cut off and discarded, and the process repeated if a still higher purity was desired.
Chemical methods
Today, silicon is instead purified by converting it to a silicon compound that can be more easily purified than silicon itself, and then converting that silicon compound back into pure silcon. Trichlorosilane is the silicon compound most commonly used as the intermediate, although silicon tetrachloride and silane are also used. When these gases are blown over silicon at high temperature, they decompose to high-purity silicon.
In the Siemens process, high-purity silicon rods are exposed to trichlorosilane at 1150°C. The trichlorosilane gas decomposes and deposits additional silicon onto the rods, enlarging them according to chemical reactions like
At one time, DuPont produced ultrapure silicon by reacting silicon tetrachloride with high-purity zinc vapors at 950°C, producing silicon according to the chemical equation
Crystallization
The Czochralski process is often used to make high-purity single silicon crystals for use in solid-state/semiconductor devices.
Isotopes
Silicon has nine isotopes, with mass numbers from 25-33. Si-28 (the most abundant isotope, at 92.23%), Si-29 (4.67%), and Si-30 (3.1%) are stable; Si-32 is a radioactive isotope produced by argon decay. Its half-life, after much argument, has been determined to be approximately 276 years, and it decays by beta emission to P-32 (which has a 14.28 year half-life) and then to S-32.
Precautions
A serious lung disease known as silicosis often occurred in miners, stonecutters, and others who were engaged in work where siliceous dust was inhaled in great quantities.
Miscellaneous Information
Because Silicon is an important element in semiconductor and high-tech devices, the high-tech region of Silicon Valley, California, is named after this element.